Performance evaluation of dual-channel armchair graphene nanoribbon field-effect transistor

Abstract

Graphene has become a potential successor to silicon in electronic devices. In this paper, the performance of dual-channel armchair graphene nanoribbon field-effect transistor (AGNR FET) is investigated. Both physical and electrical properties of dual-channel AGNR FET are simulated using Atomistic Tool Kit from Quantum Wise. Their band structures and transmission spectra are analyzed. Current-voltage characteristic is then extracted and the performance of single and dual-channel AGNR FETs is compared. From the simulation, it is found that dual-channel AGNR FET exhibits significant improvement in ON current over two fold. Results obtained will give insight in the implementation of dual-channel AGNR FET for performance enhancement in future electronic devices.