Two-dimensional Si 2 Te 2 monolayers and Si 2 Te 2 /Sb 2 Te 3 van der Waals heterostructures: promising infrared photodetector materials

Hao Chen; Zhou Cui; Rui Xiong; Huiwen Yu; Jiaxiang Li; Jiansen Wen; Xiaochun Huang; Cuilian Wen; Baisheng Sa

doi:10.1039/d5tc01609f

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Two-dimensional Si ₂ Te ₂ monolayers and Si ₂ Te ₂ /Sb ₂ Te ₃ van der Waals heterostructures: promising infrared photodetector materials

Hao Chen Zhou Cui Rui Xiong Huiwen Yu Jiaxiang Li Jiansen Wen Xiaochun Huang Cuilian Wen Baisheng Sa

Year: 2025 Journal: Journal of Materials Chemistry C Vol: 13 (30)Pages: 15372-15383 Publisher: Royal Society of Chemistry

DOI: 10.1039/d5tc01609f

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Abstract

The photoelectric properties of Si 2 Te 2 monolayers and Si 2 Te 2 /Sb 2 Te 3 van der Waals heterostructures in the IR region suggest their potential to facilitate the development of two-dimensional IR photoelectric p–i–n junction devices.

Keywords:

Materials science Monolayer Photodetector van der Waals force Heterojunction Infrared Optoelectronics Nanotechnology Optics Physics Quantum mechanics Molecule

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2D Materials and Applications

Physical Sciences → Materials Science → Materials Chemistry

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Two-dimensional Si ₂ Te ₂ monolayers and Si ₂ Te ₂ /Sb ₂ Te ₃ van der Waals heterostructures: promising infrared photodetector materials

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