Etching Process Optimization of Deep Silicon Trench Sidewall Damage with High Aspect Ratio

Yuxin Wang; Ding Jia; Chang-hai Zhou; Shoulong Zhang; Zheng-Yuan Zhao; Li Tan; Min Yin; Zhicheng Zhang; Xuejing Wang; Wei Liu; Chi Zhou; Zhi Q. Yao

doi:10.1109/cstic64481.2025.11017881

JOURNAL ARTICLE

Etching Process Optimization of Deep Silicon Trench Sidewall Damage with High Aspect Ratio

Yuxin Wang Ding Jia Chang-hai Zhou Shoulong Zhang Zheng-Yuan Zhao Li Tan Min Yin Zhicheng Zhang Xuejing Wang Wei Liu Chi Zhou Zhi Q. Yao

Year: 2025 Pages: 1-4

DOI: 10.1109/cstic64481.2025.11017881

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Keywords:

Trench Etching (microfabrication) Materials science Silicon Aspect ratio (aeronautics) Process (computing) Deep reactive-ion etching Optoelectronics Process optimization Reactive-ion etching Computer science Nanotechnology Engineering

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Advanced Surface Polishing Techniques

Physical Sciences → Engineering → Biomedical Engineering

Integrated Circuits and Semiconductor Failure Analysis

Physical Sciences → Engineering → Electrical and Electronic Engineering

Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Etching Process Optimization of Deep Silicon Trench Sidewall Damage with High Aspect Ratio

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