Nitrogen doped high selectivity amorphous carbon film for high aspect ratio etch process

Se Jun Park; Dohyung Kim; Song Yi Baek; Changsoo Lee; Jaehyun Kim; Sangho Roh; Jaesung Park; Se-Jin Kyung; Chulhwan Choi

doi:10.1016/j.tsf.2024.140582

ScienceGate Book Chapters

JOURNAL ARTICLE

Nitrogen doped high selectivity amorphous carbon film for high aspect ratio etch process

Se Jun Park Dohyung Kim Song Yi Baek Changsoo Lee Jaehyun Kim Sangho Roh Jaesung Park Se-Jin Kyung Chulhwan Choi

Year: 2024 Journal: Thin Solid Films Vol: 809 Pages: 140582-140582 Publisher: Elsevier BV

DOI: 10.1016/j.tsf.2024.140582

Get Full-Text PDF Get Analytical Report

Keywords:

Selectivity Doping Amorphous solid Materials science Nitrogen Carbon fibers Amorphous carbon Process (computing) Chemical engineering Nanotechnology Analytical Chemistry (journal) Optoelectronics Chemistry Composite material Crystallography Environmental chemistry Computer science Organic chemistry Catalysis Engineering

Metrics

Cited By

0.34

FWCI (Field Weighted Citation Impact)

Refs

0.54

Citation Normalized Percentile

Is in top 1%

Is in top 10%

Citation History

Topics

Diamond and Carbon-based Materials Research

Physical Sciences → Materials Science → Materials Chemistry

Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Metal and Thin Film Mechanics

Physical Sciences → Engineering → Mechanics of Materials

Nitrogen doped high selectivity amorphous carbon film for high aspect ratio etch process

Metrics

Citation History

Topics

Related Documents

High Aspect Ratio Silicon Etch

High Aspect Ratio Carbon Hard Mask Etch Process for Profile and LCDU Control

High-aspect-ratio amorphous carbon mask etch profile control through plasma and surface chemistry optimization

Study on defect reduction for high aspect ratio etch process

Study on defect reduction for high aspect ratio etch process