Electronic and optical properties of InSe/CuI van der Waals heterostructure with type-II band alignment: Effects of vertical strain and electric field

Mohammad Ali Mohebpour; Nicola Seriani; Meysam Bagheri Tagani

doi:10.1016/j.mtcomm.2024.111059

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Electronic and optical properties of InSe/CuI van der Waals heterostructure with type-II band alignment: Effects of vertical strain and electric field

Mohammad Ali Mohebpour Nicola Seriani Meysam Bagheri Tagani

Year: 2024 Journal: Materials Today Communications Vol: 42 Pages: 111059-111059 Publisher: Elsevier BV

DOI: 10.1016/j.mtcomm.2024.111059

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Keywords:

Materials science Heterojunction Strain (injury) van der Waals force Electric field Condensed matter physics Band gap Field (mathematics) Optoelectronics Physics Quantum mechanics Molecule

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2D Materials and Applications

Physical Sciences → Materials Science → Materials Chemistry

Heusler alloys: electronic and magnetic properties

Physical Sciences → Materials Science → Electronic, Optical and Magnetic Materials

Advanced Thermoelectric Materials and Devices

Physical Sciences → Materials Science → Materials Chemistry

Electronic and optical properties of InSe/CuI van der Waals heterostructure with type-II band alignment: Effects of vertical strain and electric field

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