Vertical strain and electric field tunable electronic properties of type-II band alignment C2N/InSe van der Waals heterostructure

Khang D. Pham; Nguyen N. Hieu; Le Minh Bui; Huynh V. Phuc; Bui D. Hoi; Lê Thị Ngọc Tú; Long Giang Bạch; Victor V. Ilyasov; B. Amin; M. Idrees; Chuong V. Nguyen

doi:10.1016/j.cplett.2018.12.027

JOURNAL ARTICLE

Vertical strain and electric field tunable electronic properties of type-II band alignment C2N/InSe van der Waals heterostructure

Khang D. Pham Nguyen N. Hieu Le Minh Bui Huynh V. Phuc Bui D. Hoi Lê Thị Ngọc Tú Long Giang Bạch Victor V. Ilyasov B. Amin M. Idrees Chuong V. Nguyen

Year: 2018 Journal: Chemical Physics Letters Vol: 716 Pages: 155-161 Publisher: Elsevier BV

DOI: 10.1016/j.cplett.2018.12.027

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Keywords:

Heterojunction van der Waals force Electric field Band gap Optoelectronics Strain (injury) Direct and indirect band gaps Electronic band structure Condensed matter physics Materials science Electron Chemistry Physics Molecule Quantum mechanics

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2D Materials and Applications

Physical Sciences → Materials Science → Materials Chemistry

MXene and MAX Phase Materials

Physical Sciences → Materials Science → Materials Chemistry

Boron and Carbon Nanomaterials Research

Physical Sciences → Materials Science → Materials Chemistry

Vertical strain and electric field tunable electronic properties of type-II band alignment C2N/InSe van der Waals heterostructure

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