JOURNAL ARTICLE

Growth instability of N-polar GaN on vicinal SiC substrate using plasma-assisted molecular beam epitaxy

Keywords:
Vicinal Molecular beam epitaxy Polar Substrate (aquarium) Materials science Instability Plasma Epitaxy Optoelectronics Chemistry Mineralogy Nanotechnology Geology Physics Organic chemistry Layer (electronics)

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40
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0.63
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Citation History

Topics

GaN-based semiconductor devices and materials
Physical Sciences →  Physics and Astronomy →  Condensed Matter Physics
Ga2O3 and related materials
Physical Sciences →  Materials Science →  Electronic, Optical and Magnetic Materials
ZnO doping and properties
Physical Sciences →  Materials Science →  Materials Chemistry

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