Growth instability of N-polar GaN on vicinal SiC substrate using plasma-assisted molecular beam epitaxy

Lili Huo; Ravikiran Lingaparthi; N. Dharmarasu; Krishna Radhakrishnan

doi:10.1016/j.tsf.2024.140572

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Growth instability of N-polar GaN on vicinal SiC substrate using plasma-assisted molecular beam epitaxy

Lili Huo Ravikiran Lingaparthi N. Dharmarasu Krishna Radhakrishnan

Year: 2024 Journal: Thin Solid Films Vol: 808 Pages: 140572-140572 Publisher: Elsevier BV

DOI: 10.1016/j.tsf.2024.140572

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Keywords:

Vicinal Molecular beam epitaxy Polar Substrate (aquarium) Materials science Instability Plasma Epitaxy Optoelectronics Chemistry Mineralogy Nanotechnology Geology Physics Organic chemistry Layer (electronics)

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GaN-based semiconductor devices and materials

Physical Sciences → Physics and Astronomy → Condensed Matter Physics

Ga2O3 and related materials

Physical Sciences → Materials Science → Electronic, Optical and Magnetic Materials

ZnO doping and properties

Physical Sciences → Materials Science → Materials Chemistry

Growth instability of N-polar GaN on vicinal SiC substrate using plasma-assisted molecular beam epitaxy

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