Growth Control of N-Polar GaN in Plasma-Assisted Molecular Beam Epitaxy
A. M. MizerovV. N. JmerikV. Kh. KaĭbyshevT. A. KomissarovaS. A. MasalovA. А. СитниковаS. V. Ivanov
Abstract
The paper reports on plasma-assisted MBE growth of good quality N-face GaN layers directly on c-Al 2 O 3 substrates.Growth kinetics under different growth conditions (substrate temperature, Ga to activated nitrogen flux ratio, etc.) during deposition of GaN(0001) and GaN(000 1) both by the ammonia-based MBE or plasma-assisted MBE was studied.It was found that atomically smooth surface of 1 µm thick GaN(000 1) films can be achieved by plasma-assisted MBE at the relatively high substrate temperature TS ≈ 760 • C and Ga to activated nitrogen flux ratio FGa/FN * ≈ 1.8.
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