High-speed, sub-volt silicon microring modulator driven by high-mobility transparent conducting oxide

Wei-Che Hsu; Nabila Nujhat; Benjamin Kupp; John F. Conley; Alan X. Wang

doi:10.1364/cleo_si.2024.sw3r.7

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High-speed, sub-volt silicon microring modulator driven by high-mobility transparent conducting oxide

Wei-Che Hsu Nabila Nujhat Benjamin Kupp John F. Conley Alan X. Wang

Year: 2024 Pages: SW3R.7-SW3R.7

DOI: 10.1364/cleo_si.2024.sw3r.7

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Abstract

We demonstrated a MOSCAP silicon microring modulator integrated with high-mobility titanium-doped indium oxide, achieving sub-volt 0.8 Vpp modulation up to 25 Gb/s, marking a milestone in transparent conducting oxide modulators for efficient optical communication.

Keywords:

Volt Optoelectronics Materials science Silicon Oxide Computer science Electrical engineering Voltage Engineering

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Photonic and Optical Devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Photonic Crystals and Applications

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Nanowire Synthesis and Applications

Physical Sciences → Engineering → Biomedical Engineering

High-speed, sub-volt silicon microring modulator driven by high-mobility transparent conducting oxide

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