Surface morphology of 3C–SiC layers grown on 4H–SiC substrates using TCS as silicon precursor

Xun Li; Maimai Mu

doi:10.1016/j.ssc.2024.115650

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Surface morphology of 3C–SiC layers grown on 4H–SiC substrates using TCS as silicon precursor

Xun Li Maimai Mu

Year: 2024 Journal: Solid State Communications Vol: 391 Pages: 115650-115650 Publisher: Elsevier BV

DOI: 10.1016/j.ssc.2024.115650

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Keywords:

Epitaxy Silicon Chlorine Materials science Morphology (biology) Hydrogen chloride Trichlorosilane Silicon carbide Photoluminescence Carbon fibers Chemical engineering Analytical Chemistry (journal) Optoelectronics Nanotechnology Chemistry Inorganic chemistry Layer (electronics) Composite material Metallurgy Organic chemistry Composite number

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Silicon Carbide Semiconductor Technologies

Physical Sciences → Engineering → Electrical and Electronic Engineering

Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Copper Interconnects and Reliability

Physical Sciences → Materials Science → Electronic, Optical and Magnetic Materials

Surface morphology of 3C–SiC layers grown on 4H–SiC substrates using TCS as silicon precursor

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