In this study, we present a humidity sensor based on vertically aligned molybdenum disulfide (MoS 2 ), which was fabricated by depositing a MoS 2 sensing layer using the chemical vapor deposition (CVD) method. The sensor exhibits a remarkable electrical response characterized by current modulation as the humidity level rises from 30% to 60% at room temperature. The device exhibits response times of approximately 690 seconds and achieves complete recovery at around 295 seconds with excellent repeatability at 50% relative humidity (RH). These results signify that CVD-grown vertically aligned MoS 2 -based sensors hold substantial promise for efficiently monitoring changes in humidity level, positioning them as strong candidates for more stable sensor development.
Lijun LuJie LiuQing LiZhiran YiJingquan LiuXiaolin WangXiang ChenBin Yang
Rahul KumarP. K. KulriyaMonu MishraFouran SinghGovind GuptaMahesh Kumar
Jong-Ju MoonHyeon-Seung KimGwangsik HongYoungmin KoMin‐Ki KwonTae-Jung Ahn
Desheng KongHaotian WangJ. JudyMauro PastaKristie J. KoskiJie YaoYi Cui
Ning LiXiangdong ChenXinpeng ChenXing DingXuan Zhao