Photoelectrical Characterization of Heavily-doped p-SiC Schottky Contacts

Hiroki Imabayashi; Hitose Sawazaki; Haruto Yoshimura; Masashi Kato; Kenji Shiojima

doi:10.7567/ssdm.2023.g-4-05

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Photoelectrical Characterization of Heavily-doped p-SiC Schottky Contacts

Hiroki Imabayashi Hitose Sawazaki Haruto Yoshimura Masashi Kato Kenji Shiojima

Year: 2023

DOI: 10.7567/ssdm.2023.g-4-05

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Keywords:

Doping Materials science Optoelectronics Characterization (materials science) Schottky diode Silicon carbide Wide-bandgap semiconductor Schottky barrier Nanotechnology Composite material

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Silicon Carbide Semiconductor Technologies

Physical Sciences → Engineering → Electrical and Electronic Engineering

Semiconductor materials and interfaces

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Aluminum Alloys Composites Properties

Physical Sciences → Engineering → Mechanical Engineering

Photoelectrical Characterization of Heavily-doped p-SiC Schottky Contacts

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