In-plane Gate Graphene Transistor with Epitaxially Grown Molybdenum Disulfide Passivation Layers

Po‐Cheng Tsai; Chun‐Wei Huang; Che-Jia Chang; Shu‐Wei Chang; Shih‐Yen Lin

doi:10.7567/ssdm.2022.h-4-02

ScienceGate Book Chapters

JOURNAL ARTICLE

In-plane Gate Graphene Transistor with Epitaxially Grown Molybdenum Disulfide Passivation Layers

Po‐Cheng Tsai Chun‐Wei Huang Che-Jia Chang Shu‐Wei Chang Shih‐Yen Lin

Year: 2022

DOI: 10.7567/ssdm.2022.h-4-02

Get Full-Text PDF Get Analytical Report

Keywords:

Molybdenum disulfide Passivation Materials science Optoelectronics Graphene Epitaxy Transistor Molybdenum Nanotechnology Electrical engineering Metallurgy Layer (electronics) Engineering Voltage

Metrics

Cited By

0.00

FWCI (Field Weighted Citation Impact)

Refs

0.12

Citation Normalized Percentile

Is in top 1%

Is in top 10%

Topics

Graphene research and applications

Physical Sciences → Materials Science → Materials Chemistry

Advancements in Semiconductor Devices and Circuit Design

Physical Sciences → Engineering → Electrical and Electronic Engineering

Nanowire Synthesis and Applications

Physical Sciences → Engineering → Biomedical Engineering

In-plane Gate Graphene Transistor with Epitaxially Grown Molybdenum Disulfide Passivation Layers

Metrics

Topics

Related Documents