Top-gate transistors fabricated on epitaxially grown molybdenum disulfide and graphene hetero-structures

Abstract

Abstract We have demonstrated that by using the thermal evaporator, wafer-scale and uniform bi-layer MoS 2 can be grown on graphene surfaces without introducing significant damage to the graphene channel. Compared with the top-gate transistors fabricated on standalone graphene films, the field-effect mobility value enhancement from 9.3 to 35.0 cm 2 V −1 ·s −1 is observed for the device fabricated on the MoS 2 /graphene hetero-structures, which suggests that the MoS 2 layer can act as an efficient passivation layer to the graphene channel. Similar field-effect mobility values obtained for the device with only a mono-layer MoS 2 passivation layer are also demonstrated.