4H-SiC Surface Modified by a Green Femtosecond Laser at Low Fluence
Yi-Hsien LiuChung‐Wei ChengC WangS KurokawaT DoiJ YuanY SanoH AidaK ZhangQ DengE KimY ShimotsumaM SakakuraK MiuraZ RehmanK JanulewiczH ShiQ SongY HouS YueY LiZ ZhangM LiK ZhangZ ZhangL WangY ZhaoY YangM ZhangY ZhaoK VanthanhY MaJ SiT ChenF ChenX HouY LiuK KuoC ChengA LeeY LiangY LiY LiuJ KuoC ChengA LeeZ YanG LiY ZhangW WangX MeiG TsibidisL MouchliadisM PedioE StratakisJ LiuY LiuC ChengA IoninS KudryashovL SeleznevD SinitsynA BunkinV LednevS PershinY LiuC ChengR MoserM DomkeJ WinterH HuberG MarowskyC WangS KurokawaJ YuanL FanH LuZ WuW YaoK ZhangY ZhangT Doi
Abstract
This study used a single femtosecond laser pulse with a wavelength of 515 nm to irradiate the 4H-SiC sample surface.The pulse energy was 1740-2110 nJ, and the effective fluence was around 1.27-1.54J/cm 2 .The ablation threshold is 1.26 J/cm 2 .The surface morphology and the ablation depth were measured by scanning electron microscopy (SEM) and atomic force microscope (AFM).The ablation depth is around 12 nm.On the other hand, a simplified model with a two-temperature model and dynamic optical model was used to predict the ablation threshold.The simulation result shows that the ablation threshold is around 1.2 J/cm 2 , which is matched the experimental results.
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