In this work, a Ka-band 4 watt power amplifier MMIC has been designed and fabricated based on a commercial 0.15µm GaAs pHEMT progress. For obtaining high power gain, three-stage structure, including four part matching networks was used for the MMIC design. Finally, the S-parameter measured on-line results show a linear gain of 23dB to 27dB and an input return loss of -15dB to -12dB from 25GHz to 31GHz. In large-signal measurements, the results demonstrate maximum output power of 4.6 watt, associated with 21dB power gain and maximum power added efficiency of 35%, respectively.
Xiaoying WangYangyang PengFangyue MaWenquan Sui
S. AraiTsuyoshi YoshidaK. KaiS. TakatsukaY. OdaS. Yanagawa