JOURNAL ARTICLE

A Ka-band 4 Watt Power Amplifier MMIC Employed GaAs PHEMT Progress

Abstract

In this work, a Ka-band 4 watt power amplifier MMIC has been designed and fabricated based on a commercial 0.15µm GaAs pHEMT progress. For obtaining high power gain, three-stage structure, including four part matching networks was used for the MMIC design. Finally, the S-parameter measured on-line results show a linear gain of 23dB to 27dB and an input return loss of -15dB to -12dB from 25GHz to 31GHz. In large-signal measurements, the results demonstrate maximum output power of 4.6 watt, associated with 21dB power gain and maximum power added efficiency of 35%, respectively.

Keywords:
Monolithic microwave integrated circuit Amplifier High-electron-mobility transistor Watt Electrical engineering Gallium arsenide Power gain Power (physics) Return loss Power bandwidth RF power amplifier Materials science Electronic engineering Engineering Optoelectronics Transistor Voltage Physics Antenna (radio)

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Citation History

Topics

Radio Frequency Integrated Circuit Design
Physical Sciences →  Engineering →  Electrical and Electronic Engineering
Microwave Engineering and Waveguides
Physical Sciences →  Engineering →  Electrical and Electronic Engineering
Advanced Power Amplifier Design
Physical Sciences →  Engineering →  Electrical and Electronic Engineering

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