Ka-band 2-watt power GaAs MMIC

Abstract

A high-power Ka-band power GaAs MMIC (monolithic microwave integrated circuit) has been developed using the distributed-element impedance transforming technique. The MMIC has an on-chip matching circuit comprising a power divider and combiner. At 30 GHz, an output power of 2 W with a 3.3-dB gain and a saturation output power of 3 W have been obtained from a 9.6-mm-gate-width power GaAs FET MMIC.< >