Effect of RF Sputtered on Characterization of SrTiO3 Thin Film

Abstract

Thin films of SrTiO3 (STO) were formed on p-type Si(100) substrates using rf magnetron sputtering at different substrate temperatures. The structural and electrical properties were investigated. The thickness of the films was between 300 and 500 nm, and the substrate temperature was always 550°C. The XRD pattern shows the cubic phase for SrTiO3 thin film. Using capacitance-voltage, current-voltage, and admittance spectroscopy, metal-insulator-semiconductor (Al/STO/p- Si/Al) structures were fabricated and characterized. The dielectric constant decreased with increasing frequency. The impedance decreased with increasing frequency.