Sputtered thin film YBa2Cu3On

Abstract

This study was carried out to determine the effect of substrate temperature, target to substrate angle, and the partial pressure of oxygen in the sputtering atmosphere on the stoichiometry of the deposition. Films were deposited by a planar magnetron sputtering of stoichiometric 1:2:3 pressed and sintered targets on MgO, ZrO2 (Y) and ZrO2 coated Al2O3 substrates. EDX and WDS were used to determine the chemical composition of the thin films. X‐ray diffraction was used to identify the structure after film crystallization at 1175 K and oxidation at 800 K. The partial pressure of oxygen appears to have the most profound effect on the stoichiometry by lowering the barium content. Negative ion resputtering of the growing film apparently also slows film growth rate. Films deposited on alumina circuitboard with a ZrO2 barrier layer have demonstrated sharp transitions to superconducting behavior at 95 K when the stoichiometric ratio is preserved.