Ferroelectric domain wall memory

Abstract

Ferroelectric domain walls appear as sub-nanometer-thick topological interfaces separating two adjacent domains in different orientations, and can be repetitively created, erased, and moved during programming into different logic states for the nonvolatile memory under an applied electric field, providing a new paradigm for highly miniaturized low-energy electronic devices. Under some specific conditions, the charged domain walls are conducting, differing from their insulating bulk domains. In the past decade, the emergence of atomic-layer scaling solid-state electronic devices is such demonstration, resulting in the rapid rise of domain wall nano-electronics. This review aims to the latest development of ferroelectric domain-wall memories with the presence of the challenges and opportunities and the roadmap to their future commercialization.