Performance Optimization of TiO₂/iCh₃Nh₃SnI₃/Cu₂O Solar Cell Using Numerical Analysis

Abstract

In this report, we have simulated intrinsic perovskite-based solar cell device (CH 3 NH 3 SnI 3 ) to optimize its performance using SCPAS ID under AM 1. 5G illumination. The used ETL and HTL are TiO 2 and $\mathrm{c}_{\mathrm{u}2}$o, respectively. The simulation is intended to focus on examining the changes in efficiency of the proposed device by variation in absorber layer thickness, defect concentration, interface states and ETL electron affinity. Furthermore, variation in the work function of back contact along with temperature was also analyzed. The obtained analysis suggests that an absorber layer thickness of l $\mu$m is optimal for favorable performance of the device. Further, we analyzed that the lower absorber defect and interface defect concentration is favorable for higher efficiency. The results also suggested that work function of back contact should be greater that 5 eV for enhanced solar cell performance. The initial parameters of the materials resulted in efficiency$\sim$25.6% which increased to 30.8% with optimized parameters.