Performance Anlysis of i-Ch₃Nh₃SnI₃ Perovskite Solar Cell Using Numerical Technique

Abstract

In this study, a simulation was performed on an intrinsic perovskite-based solar cell device comprised of CH 3 NH 3 SnI 3 by utilizing SCPAS 1D under AM 1.5G illumination. The chosen ETL is TiO 2 and HTL is MASNBr 3 . The simulation was designed to investigate the influence of changes in perovskite film thickness, defect concentration, interface states, and ETL electron affinity on the working of solar cell device. Additionally, influence of variation in temperature and back metal contact's work function was also analyzed. The results suggest that a perovskite film thickness of 1 μm maximizes device performance. Moreover, the findings suggest that reducing absorber and interface defect concentrations leads to improved efficiency. Additionally, it was determined that a back contact higher work function is advantageous for optimized solar cell performance. The starting material parameters resulted in an efficiency of approximately 25.61%., which increased to 30.8% with optimized parameters.