Low concentration hydrogen detection properties of metal-insulator-semiconductor AlGaN/GaN HEMT sensor

Wenmao Li; Robert Sokolovskij; Hongze Zheng; Jiaqi He; Minghao He; Qing Wang; Hongyu Yu

doi:10.1016/j.snb.2023.134050

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Low concentration hydrogen detection properties of metal-insulator-semiconductor AlGaN/GaN HEMT sensor

Wenmao Li Robert Sokolovskij Hongze Zheng Jiaqi He Minghao He Qing Wang Hongyu Yu

Year: 2023 Journal: Sensors and Actuators B Chemical Vol: 392 Pages: 134050-134050 Publisher: Elsevier BV

DOI: 10.1016/j.snb.2023.134050

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Keywords:

High-electron-mobility transistor Materials science Optoelectronics Semiconductor Insulator (electricity) Transistor Hydrogen sensor Analytical Chemistry (journal) Voltage Chemistry Electrical engineering

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Gas Sensing Nanomaterials and Sensors

Physical Sciences → Engineering → Electrical and Electronic Engineering

ZnO doping and properties

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Analytical Chemistry and Sensors

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Low concentration hydrogen detection properties of metal-insulator-semiconductor AlGaN/GaN HEMT sensor

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