Hydrogen sulfide detection properties of Pt-gated AlGaN/GaN HEMT-sensor

Robert Sokolovskij; Jian Zhang; Elina Iervolino; Changhui Zhao; F. Santagata; Fei Wang; Hongyu Yu; P.M. Sarro; Guo Qi Zhang

doi:10.1016/j.snb.2018.08.015

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Hydrogen sulfide detection properties of Pt-gated AlGaN/GaN HEMT-sensor

Robert Sokolovskij Jian Zhang Elina Iervolino Changhui Zhao F. Santagata Fei Wang Hongyu Yu P.M. Sarro Guo Qi Zhang

Year: 2018 Journal: Sensors and Actuators B Chemical Vol: 274 Pages: 636-644 Publisher: Elsevier BV

DOI: 10.1016/j.snb.2018.08.015

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Keywords:

High-electron-mobility transistor Materials science Optoelectronics Epitaxy Transistor Wafer Repeatability Response time Hydrogen sulfide SIGNAL (programming language) Voltage Electrical engineering Nanotechnology Chemistry Computer science Sulfur Metallurgy Engineering

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GaN-based semiconductor devices and materials

Physical Sciences → Physics and Astronomy → Condensed Matter Physics

Gas Sensing Nanomaterials and Sensors

Physical Sciences → Engineering → Electrical and Electronic Engineering

Advanced Sensor Technologies Research

Physical Sciences → Engineering → Biomedical Engineering

Hydrogen sulfide detection properties of Pt-gated AlGaN/GaN HEMT-sensor

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