Efficient P-doping on Solution-processed WSe₂ Nano-flake Thin-film Transistors for Flexible Electronics

Abstract

In this study, the doping effect of 4-NBD and $\text{Br}_{2}$ molecules on the solution-processed $\text{WSe}_{2}$ thin-film transistors is investigated. $\text{Br}_{2}$ -doped $\text{WSe}_{2}$ transistors showed field-effect hole mobility of more than $12 \text{cm}^{2}\mathrm{V}^{-1}\mathrm{s}^{-1}$ , which is 2 orders of magnitude higher than that of the nitrobenzenediazonium tetrafluoroborate (4-NBD)-doped device. Our results indicate that molecule type and size are important to realize effective doping and operational stability on solution-processed $\text{WSe}_{2}$ transistors for future applications in integrated flexible electronics.