Effect of Partial Pressure of Oxygen, Target Current, and Annealing on Dc Sputtered Tungsten Oxide (Wo3) Thin Films for Electrochromic Applications

K. Naveen Kumar; Sheik Abdul Sattar; Habibuddin Shaik; Merum Dhananjaya; Amruth S. Pawar; Nunna Guru Prakash; L. N. Chandrashekar; R. Imran Jafri; P Aishwarya

doi:10.2139/ssrn.4391380

JOURNAL ARTICLE

Effect of Partial Pressure of Oxygen, Target Current, and Annealing on Dc Sputtered Tungsten Oxide (Wo3) Thin Films for Electrochromic Applications

K. Naveen Kumar Sheik Abdul Sattar Habibuddin Shaik Merum Dhananjaya Amruth S. Pawar Nunna Guru Prakash L. N. Chandrashekar R. Imran Jafri P Aishwarya

Year: 2023 Journal: SSRN Electronic Journal Publisher: RELX Group (Netherlands)

DOI: 10.2139/ssrn.4391380

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Keywords:

Electrochromism Tungsten oxide Partial pressure Materials science Annealing (glass) Oxygen pressure Current (fluid) Oxide Thin film Oxygen Tungsten Optoelectronics Nanotechnology Electrode Electrical engineering Metallurgy Chemistry Engineering

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Transition Metal Oxide Nanomaterials

Physical Sciences → Materials Science → Polymers and Plastics

Ga2O3 and related materials

Physical Sciences → Materials Science → Electronic, Optical and Magnetic Materials

Magneto-Optical Properties and Applications

Physical Sciences → Engineering → Electrical and Electronic Engineering

Effect of Partial Pressure of Oxygen, Target Current, and Annealing on Dc Sputtered Tungsten Oxide (Wo3) Thin Films for Electrochromic Applications

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