R. N. RahimovA. S. QahramanovaD. H. AraslyА. А. ХалиловаMammadov I. Kh.A. R. Khalilzade
Ag 8 Ge 1-x Mn x Te 6 solid solutions with different manganese content (x=0, 0.05, 0.1, 0.2) were prepared by alloying and further pressing the powders under a pressure of 0.6 GPa. By the X-ray diffraction studies have shown that the introduction of manganese atoms leads to the compressibility of the Ag 8 GeTe 6 lattice. All p-type samples had high resistance below the transition at temperatures of 180-220 K. An increase in electrical conductivity in the range of 220-300 K was analyzed using the Mott ratio; at temperatures T>320 K, semiconductor behavior is observed in all compositions. The highest thermoelectric figure of merit ZT=0.7 at 550 K was obtained for a solid solution of the composition Ag 8 Ge 1-x Mn x Te 6 (x=0.05). Keywords: solid solution, Ag 8 Ge 1-x Mn x Te 6 , thermoelectric efficiency, amorphization, low thermal conductivity
Р.Н. РагимовА.С. КахрамановаД.Г. АраслыА.А. ХалиловаИ.Х. МамедовA. R. Khalilzade
Kunpeng ZhaoMengjia GuanPengfei QiuAnders B. BlichfeldEspen Z. EikelandChenxi ZhuDudi RenFangfang XuBo B. IversenXun ShiLidong Chen
Abilov Ch. I.Hasanova M. Sh.N. T. HuseynovaElmira Kasumova
Shinşuke YamanakaAtsuko KosugaKen Kurosaki