High Aspect Ratio Arrays of Si Nano-Pillars Using Displacement Talbot Lithography and Gas-Macetch

Zhitian Shi; Konstantins Jefimovs; Marco Stampanoni; Lucia Romano

doi:10.2139/ssrn.4216713

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High Aspect Ratio Arrays of Si Nano-Pillars Using Displacement Talbot Lithography and Gas-Macetch

Zhitian Shi Konstantins Jefimovs Marco Stampanoni Lucia Romano

Year: 2022 Journal: SSRN Electronic Journal Publisher: RELX Group (Netherlands)

DOI: 10.2139/ssrn.4216713

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Keywords:

Lithography Materials science Aspect ratio (aeronautics) Talbot effect Nano- Displacement (psychology) Nanotechnology Optoelectronics Composite material

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Nanofabrication and Lithography Techniques

Physical Sciences → Engineering → Biomedical Engineering

Optical Coatings and Gratings

Physical Sciences → Materials Science → Surfaces, Coatings and Films

Photonic and Optical Devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

High Aspect Ratio Arrays of Si Nano-Pillars Using Displacement Talbot Lithography and Gas-Macetch

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