Heteroepitaxial growth and band alignment of β-Ga2O3 on GaN substrate grown by non-vacuum mist-CVD

Pengru Yan; Zeyulin Zhang; Yu Xu; Hao Chen; Dazheng Chen; Qian Feng; Shengrui Xu; Yachao Zhang; Jincheng Zhang; Chunfu Zhang; Yue Hao

doi:10.1016/j.vacuum.2022.111381

JOURNAL ARTICLE

Heteroepitaxial growth and band alignment of β-Ga2O3 on GaN substrate grown by non-vacuum mist-CVD

Pengru Yan Zeyulin Zhang Yu Xu Hao Chen Dazheng Chen Qian Feng Shengrui Xu Yachao Zhang Jincheng Zhang Chunfu Zhang Yue Hao

Year: 2022 Journal: Vacuum Vol: 204 Pages: 111381-111381 Publisher: Elsevier BV

DOI: 10.1016/j.vacuum.2022.111381

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Keywords:

Heterojunction Optoelectronics Materials science Epitaxy Band gap Metalorganic vapour phase epitaxy X-ray photoelectron spectroscopy Mist Substrate (aquarium) Nanotechnology Physics Layer (electronics)

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Ga2O3 and related materials

Physical Sciences → Materials Science → Electronic, Optical and Magnetic Materials

Advanced Photocatalysis Techniques

Physical Sciences → Energy → Renewable Energy, Sustainability and the Environment

ZnO doping and properties

Physical Sciences → Materials Science → Materials Chemistry

Heteroepitaxial growth and band alignment of β-Ga2O3 on GaN substrate grown by non-vacuum mist-CVD

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