Electronic Structure of Silicon Oxynitride Films Grown by Plasma-Enhanced Chemical Vapor Deposition for Memristor Application

Timofey V. Perevalov; V.A. Volodin; Г. Н. Камаев; Andrei A. Gismatulin; S. G. Cherkova; Igor apos Prosvirin; Kseniya N. Astankova; V. A. Gritsenko

doi:10.2139/ssrn.4168750

JOURNAL ARTICLE

Electronic Structure of Silicon Oxynitride Films Grown by Plasma-Enhanced Chemical Vapor Deposition for Memristor Application

Timofey V. Perevalov V.A. Volodin Г. Н. Камаев Andrei A. Gismatulin S. G. Cherkova Igor apos Prosvirin Kseniya N. Astankova V. A. Gritsenko

Year: 2022 Journal: SSRN Electronic Journal Publisher: RELX Group (Netherlands)

DOI: 10.2139/ssrn.4168750

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Keywords:

Silicon oxynitride Materials science Chemical vapor deposition Plasma-enhanced chemical vapor deposition Silicon Plasma Deposition (geology) Chemical engineering Optoelectronics Plasma processing Memristor Nanotechnology Electronic engineering Silicon nitride Engineering Physics

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Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Advanced Memory and Neural Computing

Physical Sciences → Engineering → Electrical and Electronic Engineering

Semiconductor materials and interfaces

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Electronic Structure of Silicon Oxynitride Films Grown by Plasma-Enhanced Chemical Vapor Deposition for Memristor Application

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