JOURNAL ARTICLE

Cubic InxGa1−xN/GaN quantum wells grown by Migration Enhanced Epitaxy (MEE) and conventional Molecular Beam Epitaxy (MBE)

Keywords:
Molecular beam epitaxy Quantum well Heterojunction X-ray photoelectron spectroscopy Materials science Epitaxy Optoelectronics Photoluminescence Metastability Substrate (aquarium) Condensed matter physics Chemistry Optics Nanotechnology Physics Nuclear magnetic resonance

Metrics

14
Cited By
9.35
FWCI (Field Weighted Citation Impact)
70
Refs
0.86
Citation Normalized Percentile
Is in top 1%
Is in top 10%

Citation History

Topics

GaN-based semiconductor devices and materials
Physical Sciences →  Physics and Astronomy →  Condensed Matter Physics
Semiconductor Quantum Structures and Devices
Physical Sciences →  Physics and Astronomy →  Atomic and Molecular Physics, and Optics
Ga2O3 and related materials
Physical Sciences →  Materials Science →  Electronic, Optical and Magnetic Materials

Related Documents

JOURNAL ARTICLE

Photoluminescence and Gain of MBE Grown Cubic InxGa1—xN/GaN Heterostructures

T. FreyD. J. AsD. SchikoraK. LischkaJ. HolstA. Hoffmann

Journal:   physica status solidi (b) Year: 1999 Vol: 216 (1)Pages: 259-263
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