Cubic InxGa1−xN/GaN quantum wells grown by Migration Enhanced Epitaxy (MEE) and conventional Molecular Beam Epitaxy (MBE)

Marlene Camacho-Reynoso; Carlos A. Hernández‐Gutiérrez; C. M. Yee‐Rendón; C. Rivera-Rodríguez; D. Bahena-Uribe; S. Gallardo‐Hernández; Yuriy Kudriavtsev; M. López‐López; Y.L. Casallas-Moreno

doi:10.1016/j.jallcom.2022.165994

JOURNAL ARTICLE

Cubic InxGa1−xN/GaN quantum wells grown by Migration Enhanced Epitaxy (MEE) and conventional Molecular Beam Epitaxy (MBE)

Marlene Camacho-Reynoso Carlos A. Hernández‐Gutiérrez C. M. Yee‐Rendón C. Rivera-Rodríguez D. Bahena-Uribe S. Gallardo‐Hernández Yuriy Kudriavtsev M. López‐López Y.L. Casallas-Moreno

Year: 2022 Journal: Journal of Alloys and Compounds Vol: 921 Pages: 165994-165994 Publisher: Elsevier BV

DOI: 10.1016/j.jallcom.2022.165994

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Keywords:

Molecular beam epitaxy Quantum well Heterojunction X-ray photoelectron spectroscopy Materials science Epitaxy Optoelectronics Photoluminescence Metastability Substrate (aquarium) Condensed matter physics Chemistry Optics Nanotechnology Physics Nuclear magnetic resonance

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GaN-based semiconductor devices and materials

Physical Sciences → Physics and Astronomy → Condensed Matter Physics

Semiconductor Quantum Structures and Devices

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Ga2O3 and related materials

Physical Sciences → Materials Science → Electronic, Optical and Magnetic Materials

Cubic InxGa1−xN/GaN quantum wells grown by Migration Enhanced Epitaxy (MEE) and conventional Molecular Beam Epitaxy (MBE)

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