Boron Transient Enhanced Diffusion in Heavily Phosphorus Doped Silicon

Mengbing Huang; U. Myler; Todd W. Simpson; P. J. Simpson; I. V. Mitchell

doi:10.1557/proc-438-101

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Boron Transient Enhanced Diffusion in Heavily Phosphorus Doped Silicon

Mengbing Huang U. Myler Todd W. Simpson P. J. Simpson I. V. Mitchell

Year: 1996 Journal: MRS Proceedings Vol: 438 Publisher: Cambridge University Press

DOI: 10.1557/proc-438-101

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Keywords:

Materials science Boron Doping Silicon Diffusion Ion Thermal diffusivity Analytical Chemistry (journal) Positron annihilation spectroscopy Impurity Positron annihilation Spectroscopy Atomic physics Radiochemistry Positron Electron Nuclear physics Optoelectronics Thermodynamics Chemistry

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Silicon and Solar Cell Technologies

Physical Sciences → Engineering → Electrical and Electronic Engineering

Semiconductor materials and interfaces

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Ion-surface interactions and analysis

Physical Sciences → Engineering → Computational Mechanics

Boron Transient Enhanced Diffusion in Heavily Phosphorus Doped Silicon

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