Electron Transport Layer and Buffer Layer Optimization for Highly Efficient CsPbI3 Quantum Dot Based Light Emitting Diodes

K. M. Muhammed Salim; Sofia Masi; Ehsan Hassanabadi; Azhar Fakharuddin; Iván Mora‐Seró

doi:10.29363/nanoge.nfm.2019.191

ScienceGate Book Chapters

JOURNAL ARTICLE

Electron Transport Layer and Buffer Layer Optimization for Highly Efficient CsPbI3 Quantum Dot Based Light Emitting Diodes

K. M. Muhammed Salim Sofia Masi Ehsan Hassanabadi Azhar Fakharuddin Iván Mora‐Seró

Year: 2019 Journal: Proceedings of the nanoGe Fall Meeting19

DOI: 10.29363/nanoge.nfm.2019.191

Get Full-Text PDF Get Analytical Report

Keywords:

Quantum dot Buffer (optical fiber) Layer (electronics) Optoelectronics Light-emitting diode Diode Materials science Electron Computer science Nanotechnology Physics Quantum mechanics Telecommunications

Metrics

Cited By

0.00

FWCI (Field Weighted Citation Impact)

Refs

0.51

Citation Normalized Percentile

Is in top 1%

Is in top 10%

Topics

Perovskite Materials and Applications

Physical Sciences → Engineering → Electrical and Electronic Engineering

Semiconductor Quantum Structures and Devices

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Quantum Dots Synthesis And Properties

Physical Sciences → Materials Science → Materials Chemistry

Electron Transport Layer and Buffer Layer Optimization for Highly Efficient CsPbI3 Quantum Dot Based Light Emitting Diodes

Metrics

Topics

Related Documents

Electron Transport Layer and Buffer Layer Optimization for Highly Efficient CsPbI3 Quantum Dot Based Light Emitting Diodes

Metal-Oxide Stacked Electron Transport Layer for Highly Efficient Inverted Quantum-Dot Light Emitting Diodes

Efficient Quantum Dot Light-Emitting Diodes With DAA Doped Electron Transport Layer

Efficient InP Green Quantum‐Dot Light‐Emitting Diodes Based on Organic Electron Transport Layer

Efficient light emitting diodes with Teflon buffer layer