Electron Transport Layer and Buffer Layer Optimization for Highly Efficient CsPbI3 Quantum Dot Based Light Emitting Diodes

K. M. Muhammed Salim; Sofia Masi; Ehsan Hassanabadi; Azhar Fakharuddin; Iván Mora‐Seró

doi:10.29363/nanoge.ngfm.2019.191

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Electron Transport Layer and Buffer Layer Optimization for Highly Efficient CsPbI3 Quantum Dot Based Light Emitting Diodes

K. M. Muhammed Salim Sofia Masi Ehsan Hassanabadi Azhar Fakharuddin Iván Mora‐Seró

Year: 2019 Journal: Proceedings of the nanoGe Fall Meeting 2019

DOI: 10.29363/nanoge.ngfm.2019.191

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Keywords:

Quantum dot Optoelectronics Buffer (optical fiber) Layer (electronics) Light-emitting diode Diode Materials science Quantum dot laser Nanotechnology Computer science Semiconductor laser theory Telecommunications

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Perovskite Materials and Applications

Physical Sciences → Engineering → Electrical and Electronic Engineering

Semiconductor Quantum Structures and Devices

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Quantum Dots Synthesis And Properties

Physical Sciences → Materials Science → Materials Chemistry

Electron Transport Layer and Buffer Layer Optimization for Highly Efficient CsPbI3 Quantum Dot Based Light Emitting Diodes

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