BOOK-CHAPTER
Relaxation Mechanism of the Defect-Free 3C-SiC Epitaxial Films Grown on Step-Free 4H SiC Mesas
H. DuMarek SkowrońskiPhilip G. NeudeckAndrew J. TrunekDavid J. SpryJ. A. Powell
Year: 2006 Materials science forum Pages: 279-282 Publisher: Trans Tech Publications
Keywords:
Materials science Relaxation (psychology) Epitaxy Mechanism (biology) Optoelectronics Condensed matter physics Composite material Psychology
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Topics
Silicon Carbide Semiconductor Technologies
Physical Sciences → Engineering → Electrical and Electronic Engineering
Copper Interconnects and Reliability
Physical Sciences → Materials Science → Electronic, Optical and Magnetic Materials
Semiconductor materials and devices
Physical Sciences → Engineering → Electrical and Electronic Engineering
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