Growth of 4H- and 3C-SiC Epitaxial Layers on 4H-SiC Step-Free Mesas

Abstract

Homo- and heteroepitaxial 3C-SiC layers were grown on 4H-SiC step-free mesas. The yields of smooth, defect-free mesas were ~ 17% for both intentionally and unintentionally doped films, while those with screw dislocations and multiple stepped surfaces were ~ 22%. The electronic and structural properties of the mesas were found on a micrometer-sized length scale using µ-PL and µ-Raman, respectively. 3C-SiC mesas were found to have complete 3C-SiC coverage with some of the mesas having electronic defects, while other mesas were found to be defect-free.