Design and fabrication of Si-based photonic crystal stamps with electron beam lithography (EBL)

Abstract

The quest for mass replication has established technologies like nanoimprinting via hard stamps or PDMS stamps, where the stamps are usually produced via Electron Beam Lithography (EBL) for applications in the microelectronic industry. On the other hand, nanopatterning with self ordered structures¹ or via holographic patterns provide the basis for large area imprints for applications for example, antireflection coatings based on biomimetic motheyes². In this work we report on a technology for enabling the mass replication of custom-designed and e-beam lithographically prepared structures via establishing novel roll to roll nanoimprint processes for pattern transfer into UV curable pre-polymers. The new nano-fabrication technology is based on the concept of Disposal Master Technology (DMT) capable of patterning areas up to 1 x 1 m² and is suitable for mass volume manufacturing of large area arrays of sub-wavelength photonic elements. As an example to show the potential of the application of the new nanoimprint technologies, we choose the fabrication of a photonic crystal (PhC) structure with integrated light coupling devices for low loss interconnection between PhC lightwave circuits and optical fibre systems. We present two methods for fabrication of nanoimprint lithography stamps in Si substrate. In the first method optimized electron beam lithography (EBL) and lift-off patterning of a 15-nm thick Cr mask, and then the pattern transfer into Si using reacting ion etching (RIE) with SF6 as etch gas. In the first method, we use 200nm of positive resist PMMA 950K for EBL exposure. In this method, resist thickness, exposure dose, development time and parameter for etching have been optimized and a photonic crystal of Si-rods in air was fabricated. In the second method lift-off has not been performed and metal mask has been used as master. The subsequent steps for fabricating the master will be presented in detail.