Positive Bias-Stress Stability of Flexible Amorphous InGaZnO Thin Film Transistors with Double-Stacked Gate Insulators

Chengyuan Dong; Guochao Liu; Ying Zhang; Guofeng Feng; Wen Zhang

doi:10.36463/idw.2019.amd1-4

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Positive Bias-Stress Stability of Flexible Amorphous InGaZnO Thin Film Transistors with Double-Stacked Gate Insulators

Chengyuan Dong Guochao Liu Ying Zhang Guofeng Feng Wen Zhang

Year: 2019 Journal: Proceedings of the International Display Workshops Pages: 397-397

DOI: 10.36463/idw.2019.amd1-4

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Keywords:

Materials science Thin-film transistor Amorphous solid Optoelectronics Stress (linguistics) Thin film Composite material Nanotechnology Crystallography Layer (electronics) Chemistry

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Thin-Film Transistor Technologies

Physical Sciences → Engineering → Electrical and Electronic Engineering

Electrical and Thermal Properties of Materials

Physical Sciences → Engineering → Electrical and Electronic Engineering

ZnO doping and properties

Physical Sciences → Materials Science → Materials Chemistry

Positive Bias-Stress Stability of Flexible Amorphous InGaZnO Thin Film Transistors with Double-Stacked Gate Insulators

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