Improvement of negative-bias-illumination-stress stability in all-transparent double-gate InGaZnO thin-film transistors
Da-Bin JeonMin‐Ki RyuChun‐Won ByunJong‐Heon YangChi‐Sun HwangSung‐Min Yoon
Abstract
Fully transparent amorphous-InGaZnO thin-film transistors (TFTs) with double-gate (DG) configuration were fabricated. Both top-gate and bottom-gate (BG) TFT fabricated with a single gate-stack structure were found to exhibit sound device characteristics with μsat of 17.0 and 18.1 cm2 V−1 s−1, respectively. Confirmed benefits of DG configuration include improved current drivability and threshold voltage tunability. Further, controlling the fixed voltage bias to the BG was observed to enhance device stability under negative-bias-illumination-stress conditions.
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