Electronic properties of Si/SiGe ultrathin quantum well superlattices

Abstract

Abstract Using the self‐consistent and perturbative method of Jaros and the full potential linear muffin tin orbitals (FP‐LMTO) method coupled to a plane wave (PLW) basis in the interstitial regions, we calculate the bandstructure of some ultrathin Si m /(SiGe) n quantum well superlattices, m and n being the numbers of atomic layers. The results show that in these systems the bandgap is indirect and that these superlattices have a type II potential configuration.