Electronic properties of Si/SiGe ultrathin quantum wire superlattices

Abstract

Abstract The electronic bandstructure of ultrathin Si/Si 1– x Ge x quantum wire superlattices is investigated using two methods. The first is the pseudopotential method of M. Jaros. The second is the first‐principles method of full potential linear muffin‐tin orbitals (FP‐LMTO) coupled to a plane‐wave basis (PLW) in the interstitial regions, which is employed to verify the results obtained with the previous method. Larger quantum wire superlattices (but always ultrathin) are also investigated. The most important result is that one of these systems is found to be promising for optoelectronic applications.