3C-SiC Films Grown on Si(111) Substrates as a Template for Graphene Epitaxy.

JOURNAL ARTICLE

Year: 2009 Journal: ECS Meeting Abstracts Vol: MA2009-01 (38)Pages: 1308-1308 Publisher: Institute of Physics

DOI: 10.1149/ma2009-01/38/1308

Abstract

Abstract not Available.

Keywords:

Materials science Graphene Epitaxy Nanotechnology Optoelectronics Layer (electronics)

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Silicon Carbide Semiconductor Technologies

Physical Sciences → Engineering → Electrical and Electronic Engineering

Graphene research and applications

Physical Sciences → Materials Science → Materials Chemistry

Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering