Response to “Comment on ‘Influence of Interface Roughness on Silicon Oxide Thickness Measured by Ellipsometry’” [S. J. Fang, W. Chen, T. Yamanaka, and C. R. Helms (pp. L231–L233, Vol. 144, No. 8, 1997)]

S. Fang

doi:10.1149/1.1838264

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JOURNAL ARTICLE

Response to “Comment on ‘Influence of Interface Roughness on Silicon Oxide Thickness Measured by Ellipsometry’” [S. J. Fang, W. Chen, T. Yamanaka, and C. R. Helms (pp. L231–L233, Vol. 144, No. 8, 1997)]

S. Fang

Year: 1998 Journal: Journal of The Electrochemical Society Vol: 145 (1)Pages: 371-371 Publisher: Institute of Physics

DOI: 10.1149/1.1838264

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Keywords:

Ellipsometry Materials science Oxide Chen Surface finish Fang Analytical Chemistry (journal) Optics Composite material Chemistry Physics Nanotechnology Thin film Geology Metallurgy Environmental chemistry

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Electron and X-Ray Spectroscopy Techniques

Physical Sciences → Materials Science → Surfaces, Coatings and Films

Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Silicon and Solar Cell Technologies

Physical Sciences → Engineering → Electrical and Electronic Engineering

Response to “Comment on ‘Influence of Interface Roughness on Silicon Oxide Thickness Measured by Ellipsometry’” [S. J. Fang, W. Chen, T. Yamanaka, and C. R. Helms (pp. L231–L233, Vol. 144, No. 8, 1997)]

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