JOURNAL ARTICLE

Influence of Interface Roughness on Silicon Oxide Thickness Measured by Ellipsometry

S. FangW. ChenT. YamanakaC. R. Helms

Year: 1997 Journal:   Journal of The Electrochemical Society Vol: 144 (8)Pages: L231-L233   Publisher: Institute of Physics

Abstract

To accurately determine the thickness of ultrathin films, the influence of roughness on ellipsometric measurements must be examined Although ellipsometry has been applied to study roughness, quantitative relationship of Si surface roughness measured by ellipsometry and atomic force microscopy is not available. This leads to difficulties in estimating the influence of roughness on oxide thickness measurements. Here we first establish the correlation of roughness measured by these two techniques. Based on such a relationship, we can explain the discrepancy of oxide thickness measured by ellipsometry and surface sensitive techniques.

Keywords:
Ellipsometry Materials science Surface finish Surface roughness Oxide Atomic force microscopy Silicon oxide Silicon Optics Analytical Chemistry (journal) Composite material Optoelectronics Thin film Nanotechnology Chemistry Metallurgy Physics

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31
Cited By
3.75
FWCI (Field Weighted Citation Impact)
1
Refs
0.94
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Is in top 1%
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Citation History

Topics

Ion-surface interactions and analysis
Physical Sciences →  Engineering →  Computational Mechanics
Surface Roughness and Optical Measurements
Physical Sciences →  Engineering →  Computational Mechanics
Thin-Film Transistor Technologies
Physical Sciences →  Engineering →  Electrical and Electronic Engineering

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