JOURNAL ARTICLE
Oxygen Precipitation in Lightly and Heavily Doped Czochralski Silicon
Year: 2006 Journal: ECS Meeting Abstracts Vol: MA2006-02 (25)Pages: 1211-1211 Publisher: Institute of Physics
Abstract
Abstract not Available.
Keywords:
Silicon Precipitation Doping Oxygen Materials science Czochralski method Optoelectronics Chemistry Meteorology Physics
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Topics
Silicon and Solar Cell Technologies
Physical Sciences → Engineering → Electrical and Electronic Engineering
Semiconductor materials and interfaces
Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics
Silicon Nanostructures and Photoluminescence
Physical Sciences → Materials Science → Materials Chemistry
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