Oxygen incorporation and precipitation behavior in heavily boron-doped Czochralski silicon crystals

Kwang Su Choe

doi:10.1016/0022-0248(94)00633-4

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Oxygen incorporation and precipitation behavior in heavily boron-doped Czochralski silicon crystals

Kwang Su Choe

Year: 1995 Journal: Journal of Crystal Growth Vol: 147 (1-2)Pages: 55-63 Publisher: Elsevier BV

DOI: 10.1016/0022-0248(94)00633-4

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Keywords:

Boron Silicon Materials science Getter Doping Oxygen Oxide Annealing (glass) Wafer Precipitation Analytical Chemistry (journal) Boron oxide Crystal (programming language) Electrical resistivity and conductivity Mineralogy Chemistry Nanotechnology Metallurgy Optoelectronics

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Silicon and Solar Cell Technologies

Physical Sciences → Engineering → Electrical and Electronic Engineering

Silicon Nanostructures and Photoluminescence

Physical Sciences → Materials Science → Materials Chemistry

Thin-Film Transistor Technologies

Physical Sciences → Engineering → Electrical and Electronic Engineering

Oxygen incorporation and precipitation behavior in heavily boron-doped Czochralski silicon crystals

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