Exciton line broadening in strained InGaAs/GaAs single quantum wells

Wenzhong Shen; W. G. Tang; Z. Y. Li; Si Shen; T. Andersson

doi:10.1007/s003390050094

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Exciton line broadening in strained InGaAs/GaAs single quantum wells

Wenzhong Shen W. G. Tang Z. Y. Li Si Shen T. Andersson

Year: 1995 Journal: Applied Physics A Vol: 60 (3)Pages: 243-245 Publisher: Springer Science+Business Media

DOI: 10.1007/s003390050094

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Keywords:

Exciton Quantum well Laser linewidth Condensed matter physics Conduction band Phonon Band offset Biexciton Chemistry Materials science Band gap Physics Valence band Optics Laser Quantum mechanics

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Semiconductor Quantum Structures and Devices

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Semiconductor Lasers and Optical Devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Spectroscopy and Laser Applications

Physical Sciences → Chemistry → Spectroscopy

Exciton line broadening in strained InGaAs/GaAs single quantum wells

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