Exciton optical absorption in disordered, strained InGaAs/GaAs single quantum wells

Joseph Micallef; E.Herbert Li; Bernard L. Weiss

doi:10.1006/spmi.1993.1063

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Exciton optical absorption in disordered, strained InGaAs/GaAs single quantum wells

Joseph Micallef E.Herbert Li Bernard L. Weiss

Year: 1993 Journal: Superlattices and Microstructures Vol: 13 (3)Pages: 315-315 Publisher: Elsevier BV

DOI: 10.1006/spmi.1993.1063

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Keywords:

Exciton Quantum well Materials science Condensed matter physics Wavelength Polarization (electrochemistry) Absorption edge Absorption (acoustics) Attenuation coefficient Optoelectronics Band gap Molecular physics Optics Physics Chemistry

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Semiconductor Lasers and Optical Devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Semiconductor Quantum Structures and Devices

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Photonic and Optical Devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Exciton optical absorption in disordered, strained InGaAs/GaAs single quantum wells

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