Structural and Electrical Characterization of TiO<sub>2</sub> and Al-Doped TiO<sub>2</sub> Films on Ir Electrode for Next Generation DRAM Capacitor

Sora Han; Seong Keun Kim; Cheol Seong Hwang

doi:10.1149/ma2010-02/20/1445

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Structural and Electrical Characterization of TiO₂ and Al-Doped TiO₂ Films on Ir Electrode for Next Generation DRAM Capacitor

Sora Han Seong Keun Kim Cheol Seong Hwang

Year: 2010 Journal: ECS Meeting Abstracts Vol: MA2010-02 (20)Pages: 1445-1445 Publisher: Institute of Physics

DOI: 10.1149/ma2010-02/20/1445

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Keywords:

Characterization (materials science) Capacitor Materials science Doping Dram Electrode Optoelectronics Nanotechnology Electrical engineering Voltage Chemistry Engineering Physical chemistry

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Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Advanced Memory and Neural Computing

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Ferroelectric and Negative Capacitance Devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Structural and Electrical Characterization of TiO₂ and Al-Doped TiO₂ Films on Ir Electrode for Next Generation DRAM Capacitor

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