Metal-Insulator-Metal Capacitors Using Atomic Layer Deposited Al2O3 and HfO2 Dielectrics

In‐Sung Park; Seungki Yoon; Jinho Ahn; Ki-Man Kim; Jae-Ho Choi

doi:10.1149/ma2008-02/32/2153

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Metal-Insulator-Metal Capacitors Using Atomic Layer Deposited Al2O3 and HfO2 Dielectrics

In‐Sung Park Seungki Yoon Jinho Ahn Ki-Man Kim Jae-Ho Choi

Year: 2008 Journal: ECS Meeting Abstracts Vol: MA2008-02 (32)Pages: 2153-2153 Publisher: Institute of Physics

DOI: 10.1149/ma2008-02/32/2153

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Abstract

Abstract not Available.

Keywords:

Capacitor Materials science Metal Dielectric Atomic layer deposition Metal-insulator-metal Insulator (electricity) Layer (electronics) High-κ dielectric Optoelectronics Nanotechnology Metallurgy Electrical engineering Voltage Engineering

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Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Copper Interconnects and Reliability

Physical Sciences → Materials Science → Electronic, Optical and Magnetic Materials

Ferroelectric and Negative Capacitance Devices

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Metal-Insulator-Metal Capacitors Using Atomic Layer Deposited Al2O3 and HfO2 Dielectrics

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